2N7002T डाटा शीट PDF( Datasheet )

2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS 60V RDS(ON) 7.5Ω @ VGS = 5V ID TA = +25°C 115mA Description and Applications This new generation MOSFET has been designed to min

Production specification Small Signal MOSFET Transistor FEATURES  Low on-resistance.  Low gate threshold voltge.  Low input capacitance.  Fast switching speed.  Low input/output leakage. Pb Le

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) V(BR)DSS 60 V RDS(on)MAX  5Ω@10V  7Ω@5V   ID 115mA SOT-523 3 1. GATE 2. SOURCE 3. D

2N7002T — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low In

Elektronische Bauelemente 2N7002T 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Drain–So

Features • Low Gate Threshold Voltage • Low Input Capacitance • Low On-Resistance • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (1) �

N-Channel Enhancement Mode Field Effect Transistor 2N7002T Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ul