2N7002L डाटा शीट PDF( Datasheet )

MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualifie

2N7002L — N-Channel Enhancement Mode Field Effect Transistor October 2014 2N7002L N-Channel Enhancement Mode Field Effect Transistor Features • High Density Cell Design for Low RDS(ON) • Voltage Contro

2N7002L Small signal MOSFET 60V, 115mA, N-Channel SOT-23 Features Pb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS Drain-Gate Voltage (RGS=1.0MΩ) VDGR

UNISONIC TECHNOLOGIES CO., LTD 2N7002L Preliminary 60V, 115mA, N-CHANNEL MOSFET Power MOSFET „ DESCRIPTION The UTC 2N7002L uses advanced technology to provide excellent RDS(ON), low gate charge and operat

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1/D TMOS FET Transistor N–Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating D

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current

2N7002LT1 Preferred Device Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current �