2N7002E डाटा शीट PDF( Datasheet )

N-Channel 60 V (D-S) MOSFET 2N7002E Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 60 3 at VGS = 10 V ID (mA) 240 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resis

2N7002E Small Signal MOSFET Single N−Channel, 60 V, 310 mA, 2.5 Ohm Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Application

Enhancement Mode MOSFET (N-Channel) 2N7002E Enhancement Mode MOSFET (N-Channel) Features • High density cell design for low RDS(ON). • Voltage controlled small signal switch • Rugged and reliable • Hig

N-Channel 60V MOSFET Features: Surface-mounted package Halogen free Advanced trench cell design Extremely low threshold voltage ESD protected (HBM ≧ 2KV) Application Portable appliances 2N7002E BVDSS=60V , R

SPICE MODEL: 2N7002E 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT · · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switch

2N7002E N-channel TrenchMOS™ FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using T