डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N7000 | N-Channel DMOS FET 2N7000
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Ther |
Microchip |
|
2N7000 | TMOS FET Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
Motorola Preferred Device
MAXIMUM RATINGS
Rating Drain S |
Motorola Inc |
|
2N7000 | N-channel MOSFET DISCRETE SEMICONDUCTORS
DATA SHEET
2N7000 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product spec |
NXP |
|
2N7000 | N-Channel MOSFET 2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
2N7000 2N7002 VQ1000J VQ1000P BS170 60
V(BR)DSS Min (V)
rDS(on) Max (W)
5 @ VGS = 10 V 7.5 @ VGS = 10 |
Vishay Siliconix |
|
2N7000 | N-Channel MOSFET 2N7000 N−Ch, Enhancement Mode
Field Effect Transistor TO−92 Type Package
D
Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Satura |
NTE |
|
2N7000 | N-Channel MOSFET Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2N7000
·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot v |
INCHANGE |
|
2N7000 | N-Channel MOSFET 2N7000 2N7002
N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on) max ID
2N7000
)2N7002
60 V 60 V
< 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A
t(s■ Low Qg |
ST Microelectronics |
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