डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6661
• VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Herm |
Seme LAB |
|
2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs Supertex inc.
2N6661
N-Channel Enhancement-Mode Vertical DMOS FET
Features
►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching sp |
Supertex Inc |
|
2N6661 | TMOS SWITCHING FET TRANSISTORS 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR
These TMOS Power FETs are designed. for high-current, high-
speed power switching applications such a |
Motorola Inc |
|
2N6661 | N-Channel MOSFET 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 90 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V Configuration
90 4 Single
TO-205AD (TO-39)
S 1
|
Vishay Siliconix |
|
2N6661 | N-Channel MOSFET |
Solid State |
|
2N6661 | N-Channel Enhancement-Mode Vertical DMOS FET 2N6661
N-Channel, Enhancement-Mode, Vertical DMOS FET
Features
• Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent the |
Microchip |
|
2N6661-2 | N-Channel MOSFET 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 90 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V Configuration
90 4 Single
TO-205AD (TO-39)
S 1
|
Vishay |
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