2N65 डाटा शीट PDF( Datasheet )

R SEMICONDUCTOR 2N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Improved dv/dt capability,high

Production specification 2A, 650 Volts N-CHANNEL POWER MOSFET FEATURES z RDS(on)=5.0Ω@VGS=10V. Pb z Ultra Low gate charge (typical 9.0nC) Lead-free z Low reverse transfer capacitance (Crss = typical 5.0

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance

UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 TO-220 1 1 TO-220F TO-220F1  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better

UNISONIC TECHNOLOGIES CO., LTD 2N65-C 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, l

UNISONIC TECHNOLOGIES CO., LTD 2N65-CB 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,

2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2N652 GERMANIUM PNP MILLIWATT TRANSISTORS · .. designed primarily for low·power audio amplifier and medium· speed switching applications. • Stabilization B