2N6282 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applicati

isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6285/6286/6287 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in g

2N6282 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (

2N6282 – 2N6283 – 2N6284 NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency

2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices ar