2N6278 डाटा शीट PDF( Datasheet )

2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(

www.DataSheet4U.com 2N6278 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Me

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=100V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power a