| No. | Partie # | Fabricant | Description | Fiche Technique |
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Central Semiconductor |
(2N6130 - 2N6134) NPN SILICON TRANSISTOR 0 5.0 5.0 TO-220FP Full Pak fT (MHz) MIN 0.8 0.8 0.8 0.8 0.8 0.8 0.8 4.0 4.0 4.0 5.0 5.0 5.0 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.0 20 20 20 4.0 4.0 5.0 5.0 5.0 @ IC VCE(SAT) @ IC (A) (V) MAX 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.5 2.5 2.5 0.6 0.6 |
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SavantIC |
Silicon Power Transistor S Tj=25 unless otherwise specified PARAMETER 2N6129 VCEO(SUS) Collector-emitter sustaining voltage 2N6130 2N6131 2N6129 VCEsat Collector-emitter saturation voltage IC=0.1A ;IB=0 SYMBOL 2N6129 2N6130 2N6131 CONDITIONS MIN 40 60 80 TYP. MAX UNIT |
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INCHANGE |
NPN Transistor B= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 4V ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VE |
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