2N60H डाटा शीट PDF( Datasheet )

KIA SEMICONDUCTORS 2.0A, 600V N-CHANNEL MOSFET 2N60H 1.Description The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such

2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE  2A,600V,RDS(ON)=4Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220

2N60(F,B,H,G,D)S 2 Amps,600 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Impro