2N5583 डाटा शीट PDF( Datasheet )

2N5583 JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR PNP SILICON fc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Co

2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJ

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2N5583 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 30V 6.10 (0.240) 6.60 (0.260)