2N5551C डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2N5551C | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturati |
 KEC |
|
| 2N5551 | NPN Amplifier |  ON Semiconductor |
|
| 2N5551 | HIGH VOLTAGE SWITCHING TRANSISTOR |  UTC |
|
| 2N5551 | NPN TRANSISTOR | KEC |
|
| 2N5551 | NPN General Purpose Amplifier |  Fairchild Semiconductor |
|
| 2N5551 | Amplifier Transistors |  Motorola |
|
| 2N5551 | NPN high-voltage transistors |  Philips |
|
| 2N5551C | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
|
| 2N5551 | Silicon NPN Power Transistor |  Inchange Semiconductor |
|
| 2N5551 | Silicon NPN Transistor |  NTE |
|
| 2N5551S | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |