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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N5401 | PNP General Purpose Amplifier 2N5401 / MMBT5401
Discrete POWER & Signal Technologies
2N5401
MMBT5401
C
E C BE
TO-92
SOT-23
Mark: 2L
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch fo |
Fairchild Semiconductor |
|
2N5401 | Amplifier Transistor 2N5401
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage |
ON Semiconductor |
|
2N5401 | AMPLIFIER TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5400/D
Amplifier Transistors
PNP Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base |
Motorola |
|
2N5401 | Bipolar Transistor Bipolar Transistor
Features:
• No External Components Required • Internal Short-Circuit Current Limiting • Internal Thermal Overload Protection
Emitter 3
2 Base
1 Collector
Description:
A nega |
Multicomp |
|
2N5401 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Satu |
KEC |
|
2N5401 | PNP high-voltage transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5400; 2N5401 PNP high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04
1997 May |
Philips |
|
2N5401 | Silicon NPN Transistor 2N5400 & 2N5401 Silicon PNP Transistor General Purpose Amplifier
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 2N5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
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