2N5302 डाटा शीट PDF( Datasheet )

2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector−Emitter Satura

2N5302 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltag

isc Silicon NPN Power Transistors INCHANGE Semiconductor 2N5302 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·Complement to Type 2N4399 ·100