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2N5301 | POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5301/D
High-Power NPN Silicon Transistors
. . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sus |
ON Semiconductor |
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2N5301 | Bipolar NPN Device 2N5301
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1 |
Seme LAB |
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2N5301 | Silicon NPN Power Transistors Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5301 2N5302 2N5303
DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent saf |
Inchange Semiconductor |
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2N5301 | NPN SILICON POWER TRANSISTOR |
SSDI |
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2N5301 | Bipolar Transistor Bipolar Transistor
Features:
• High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA • Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A
NPN
Collector 3
2 Base
1 Emitte |
Multicomp |
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2N5301 | Silicon NPN Transistor 2N5301 & 2N5303 Silicon NPN Transistor High Power Audio Amplifier
TO−3 Type Package
Description: The 2N5301 and 2N5303 are silicon NPN transistors in a TO−3 type case designed for use in power amplifier and |
NTE |
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2N5301 | N-CHANNEL JFET 2N5301 N-CHANNEL JFET
Linear Systems replaces discontinued LF5301 and PF5301
The 2N5301 is a very High Input Impedance N-Channel JFET amplifier
The 2N5301 N-channel JFET is designed to provide performance ampl |
Micross |
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