| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola |
PNP power transistors Cutoff Current (VCE =Rated VCEO' VBE(of!) =1. 5 Vdc) 5,6 (VCE =Rated VCEO' VBE(of!) = 1. 5 Vdc, TC =150'C) ICEX - 0.1 2.0 Collector Cutoff Current - .(VCB =Rated VCB' IE • 0) Emitter Cutoff Current (V8E ' 5.0 Vdc, IC' 0) ICBO - 0.1 lEBO |
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Central Semiconductor |
Silicon power Transistor |
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Inchange Semiconductor |
(2N4901 - 2N4903) Silicon PNP Power Transistors f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 |
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Seme LAB |
Bipolar PNP Device age dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Te |
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Inchange Semiconductor |
(2N4901 - 2N4903) Silicon PNP Power Transistors f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 |
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Inchange Semiconductor |
(2N4901 - 2N4903) Silicon PNP Power Transistors f - http://www.DataSheet4U.co.kr/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 |
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Comset Semiconductor |
(2N4901 - 2N4903) PNP Silicon Transistors .3 Unit °C/W °C/W 13 17/10/2012 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N4901 – 2N4902 – 2N4903 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) Ratings Collector-Emitter Breakdown Voltage) Collector-Base cut-off |
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Comset Semiconductor |
(2N4901 - 2N4903) PNP Silicon Transistors .3 Unit °C/W °C/W 13 17/10/2012 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N4901 – 2N4902 – 2N4903 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) Ratings Collector-Emitter Breakdown Voltage) Collector-Base cut-off |
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Solitron Devices |
N-Channel JFET LOW NOISE: 1.2 NV/√HZ TYPICAL FAST SWITCHING Gate 3 DESCRIPTION The -40V 2N4091, 2N4092, and 2N4093 JFET’s are targeted for very low noise switching applications for mid to high frequency designs. Gate leakages are typically 50pA at room temperatu |
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