डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N3906S | PNP Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA )
APPLICATIONS ·Designed for high-speed switching ·Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25� |
INCHANGE |
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2N3906S | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Sat |
KEC |
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2N3906SC | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
2N3906SC
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. E |
KEC |
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