2N3790 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and

2N3789 2N3791 2N3790 2N3792 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon PNP power transistors, manuf

: SILICON PNP TRIPLE DIFFUSED TYPE 33 POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS. FEATURES . High Gain and Excellent hFE Linearity: hFE=15(Min.) @ VC E=-2V, Ic=-3A Low Saturation Voltage:

2N3789 thru 2N3792 (SILICON) CASEll~.(TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. Complement to NPN type 2N3713 thru 2N3716. Collector connected to case MAX

PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in