2N3716 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3715/D Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • • •

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2N3716 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (

: SILICON NPN TRIPLE DIFFUSED TYPE 33 2N3716 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVE APPLICATIONS. FEATURES . High Gain at High Current . Low Saturation Voltage : VcE(s

2N3713 2N3715 2N3714 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured

NPN 2N3713 – 2N3714 – 2N3715 – 2N3716 EPITAXIAL-BASE TRANSISTORS The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in

2N3715 & 2N3716 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF19500/408  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristic