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2N3583 | Silicon NPN Transistors 2N3583, 2N3584, 2N3585 Silicon NPN Transistors High Voltage, Medium Power Switch
TO66 Type Package
Description: The 2N3583, 2N3584, and 2N3585 are silicon transistors in a TO66 type package designed for high� |
NTE |
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2N3583 | POWER TRANSISTORS(35W) A
A
A
A
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Mospec Semiconductor |
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2N3583 | 5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
2N3583
APPLICATIONS:
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Off-Line Inverters Switching Regulators Motor Controls
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Defl |
Microsemi Corporation |
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2N3583 | SILICON NPN TRANSISTORS 2N3583 2N3584 2N3585
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and |
Central Semiconductor |
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2N3583 | NPN SILICON POWER TRANSISTORS NPN 2N3583 – 2N3584 – 2N3585
NPN SILICON POWER TRANSISTORS.
The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case. They are designed for high-speed switching and linear amplifier application for h |
Comset Semiconductor |
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2N3583 | Bipolar NPN Device 2N3583
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
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Seme LAB |
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2N3583 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N3583
DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturatio |
Inchange Semiconductor |
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