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2N3583 डाटा शीट PDF( Datasheet )


डेटा पत्रक ( Datasheet PDF )

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2N3583   Silicon NPN Transistors

2N3583, 2N3584, 2N3585 Silicon NPN Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The 2N3583, 2N3584, and 2N3585 are silicon transistors in a TO66 type package designed for high�
NTE
NTE
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2N3583   POWER TRANSISTORS(35W)

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Mospec Semiconductor
Mospec Semiconductor
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2N3583   5 Amp/ 250V/ High Voltage NPN Silicon Power Transistors

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3583 APPLICATIONS: • • • Off-Line Inverters Switching Regulators Motor Controls • • • Defl
Microsemi Corporation
Microsemi Corporation
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2N3583   SILICON NPN TRANSISTORS

2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and
Central Semiconductor
Central Semiconductor
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2N3583   NPN SILICON POWER TRANSISTORS

NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case. They are designed for high-speed switching and linear amplifier application for h
Comset Semiconductor
Comset Semiconductor
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2N3583   Bipolar NPN Device

2N3583 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500)
Seme LAB
Seme LAB
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2N3583   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION ·Contunuous Collector Current-IC= 1A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturatio
Inchange Semiconductor
Inchange Semiconductor
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