2N1711 डाटा शीट PDF( Datasheet )

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collec

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Phil

2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier,

NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-

2N718A 2N956, 2N1711 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (a T^ = 25°C Derate above 25°C Total Device Dissipation (S Tq = 25°

2N1711 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching