| No. | Partie # | Fabricant | Description | Fiche Technique |
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Intel Corporation |
(TE28Fxxx) 3 Volt Advanced Boot Block Flash Memory s s s s s s s s The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+ Boot Block Flash memory devices incorporate low volta |
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Intel Corporation |
3 Volt Advanced+ Boot Block Flash Memory ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time |
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Macronix International |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C • Fast access time : 90/120ns • Low power consumption - 9mA maximu |
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Macronix International |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C • Fast access time : 90/120ns • Low power consumption - 9mA maximu |
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Macronix International |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C • Fast access time : 90/120ns • Low power consumption - 9mA maximu |
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Macronix International |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C • Fast access time : 90/120ns • Low power consumption - 9mA maximu |
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Intel |
Boot Block Flash Memory ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V for Fast Production Programming ■ 1.65 V –2.5 V or 2.7 V –3.6 V I/O Option — Reduces Overall System Power ■ High Performance — 2.7 V – 3.6 V: 70 ns Max Access Time ■ Optimized |
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Intel |
Boot Block Flash Memory ■ Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V for fast production programming ■ 1.65 V to 2.5 V or 2.7 V to 3.6 V I/O Option — Reduces overall system power ■ High Performance — 2.7 V – 3.6 V: 70 ns max access time ■ Opti |
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