| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
SILICON DIFFUSED JUNCTION TYPE ZENER DIODE NT rd (Ω) CURRENT MAX. IZ (mA) TEMPERATURE COEFFICIENT OF ZENER VOLTAGE αT (mV / °C) TYP. MAX. 5.6 6.2 6.8 6.2 6.8 7.4 6.45 6.8 7.14 6.8 7.5 8.3 7.13 7.5 7.87 7.4 8.2 9.1 7.79 8.2 86.1 8.2 9.1 10.1 8.65 9.1 9.55 9.0 10 11.0 9.5 10 10.5 9.9 11 1 |
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JINAN JINGHENG |
0.5W SILICON PLANAR ZENER DIODES Total power dissipation:max.500 mW Small plastic package suitable for surface mounted design Wide variety of voltage ranges: nom.2.0 to 120V(E24 range) Tolerance approximately ±5% High temperature soldering guaranteed:260℃/10 seconds at terminals J |
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SEMTECH |
SILICON PLANAR ZENER DIODES Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design Wide variety of voltage ranges: nom.2.0 to 120V (E24 range) Tolerance approximately + / - 5% PINNING PIN 1 2 DESCRIPTION Cathode Anode 1 2 Top view Si |
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CUMSUMI |
SILICON PLANAR ZENER DIODES Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design Wide variety of voltage ranges: nom.2.0 to 120V (E24 range) Tolerance approximately + / - 5% Absolute Maximum Ratings (Ta = 25oC) Zener Current see Table “ |
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MDD |
SILICON PLANAR ZENER DIODES Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design Wide variety of voltage ranges: nom.2.0 to 120V (E24 range) Tolerance approximately + / - 5% Symbol Ptot Tj TS Value 500 150 -55 to +150 Unit mW OC OC |
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