1SS187 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Ultra High Speed Switching Application 1SS187 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: D3· D3 SOT-23 1 3 2 Maximum R

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes 1SS187 SWITCHING DIODE FEATURES Power dissipation PD : 150 mW(Tamb=25℃) Forward Current IF: 100 m A Reverse Voltage VR: 80 V Operating and stora

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE 1SS187 FEATURES * Power dissipation PD: 150 mW(Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 80 V * Operating and storage j

1SS187 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolu

1. CATHODE 2. N.C. 3. ANODE Features — Low forward voltage : VF(3)=0.92V(typ.) — Fast reverse recovery time : trr=1.6ns(typ.) MARKING: D3 1SS187 Switching Diodes SOT-23 Maximum Ratings @TA=25℃ Parame

Production specification Surface mount switching diode FEATURES  Low forward voltage Pb VF=0.92V(typ). Lead-free  Small total capacitance:CT=2.2pF(typ).  Fast reverse recovery time:trr=1.6ns(ty