डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
18N10 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.14Ω(Max) ·Fast Sw |
Inchange Semiconductor |
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18N10 | N-Channel Mosfet Transistor | Inchange Semiconductor |
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18N120BN | HGTG18N120BN | Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |