डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
15N12 | N-Channel Mosfet Transistor isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage
: VDSS= 120V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max) ·Fast Switching ·Minimum Lot- |
Inchange Semiconductor |
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15N120A | IXSH15N120A Preliminary Data Sheet
IXSH15N120A
IGBT
"S" Series - Improved SCSOA Capability
IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V
Symbol V CES www.DataSheet4U.com V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc |
IXYS Corporation |
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15N120NDA | KGH15N120NDA SEMICONDUCTOR
TECHNICAL DATA
KGH15N120NDA
General Description
KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other so |
KEC |
www.DataSheet.in | 2017 | संपर्क |