11N90 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistanc

UNISONIC TECHNOLOGIES CO., LTD 11N90 11A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N90 is a N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar s

FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 n