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VSKH105-12P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - ADD-A-PAK Generation VII Power Modules - Vishay

भाग संख्या VSKH105-12P
समारोह ADD-A-PAK Generation VII Power Modules
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VSKH105-12P?> डेटा पत्रक पीडीएफ

VSKH105-12P pdf
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VSK.105
04
06
08
10
12
14
16
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
600
800
1000
1200
1400
1600
IRRM, IDRM
AT 130 °C
mA
20
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
IT(AV)
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave,
TC = 85 °C
VALUES
105
Maximum continuous RMS on-state current,
as AC switch
IO(RMS)
or
I(RMS)
I(RMS)
235
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t (1)
Maximum value or threshold voltage
VT(TO) (2)
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
Notes
(1) I2t for time tx = I2t x tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x x IAV < I < x IAV
(4) I > x IAV
rt (2)
VTM
VFM
dI/dt
IH
IL
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Low level (3)
High level (4)
TJ = TJ maximum
Low level (3)
High level (4)
TJ = TJ maximum
ITM = x IT(AV)
IFM = x IF(AV)
TJ = 25 °C
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
2000
2094
1682
1760
20
18.26
14.14
12.91
200
0.98
1.12
2.7
2.34
1.8
150
250
400
UNITS
A
kA2s
kA2s
V
m
V
A/μs
mA
Revision: 14-Jan-14
2 Document Number: 94628
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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