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VFT6045C-M3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या VFT6045C-M3
समारोह Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VFT6045C-M3?> डेटा पत्रक पीडीएफ

VFT6045C-M3 pdf
www.vishay.com
VFT6045C-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
IF = 10 A
IF = 15 A
IF = 30 A
IF = 10 A
IF = 15 A
IF = 30 A
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.44
0.47
0.54
0.33
0.37
0.47
-
18
MAX.
-
-
0.64
-
-
0.56
3000
50
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
VFT6045C
5.0
3.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VFT6045C-M3/4W
1.76
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
D = 0.5
D = 0.3
D = 0.8
16
14
D = 0.2
12
10
D = 0.1
8
6
D = 1.0
T
4
2
D = tp/T
tp
0
0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 22-Nov-13
2 Document Number: 89357
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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