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DMN3018SSS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN3018SSS
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMN3018SSS pdf
DMN3018SSS
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
IS
Value
30
±25
7.3
5.7
9.7
7.8
5.5
4.3
7.6
5.8
60
2.5
Units
V
V
A
A
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = 25°C
TA = 70°C
Steady state
t<10s
TA = 25°C
TA = 70°C
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.4
0.9
90
50
1.7
1.1
75
42
7.6
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Trr
Qrr
Min
30
-
-
1
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.7
15
20
8.3
-
697
97
67
1.47
6.0
13.2
2.2
1.8
4.3
4.4
20.1
4.1
7.3
7.9
Max
-
1
±10
2.1
21
35
-
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN3018SSS
Document number: DS35501 Rev. 5 - 2
2 of 6
www.diodes.com
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 24V, VGS = 0V
μA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mΩ VGS = 10V, ID = 10A
VGS = 4.5V, ID = 8.5A
S VDS = 5V, ID = 6.9A
V VGS = 0V, IS = 1A
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = 10V, VDS = 15V,
nC ID = 9A
nC
ns
ns VDD = 15V, VGS = 10V,
ns RL = 15,ID = 1A, RG = 6
ns
ns
nC
IF = 9A, di/dt = 500A/μs
February 2012
© Diodes Incorporated

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