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DMN3016LDN डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN3016LDN
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN3016LDN pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
Steady State
t<10s
TA = +25°C
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
DMN3016LDN
Value
30
±20
7.3
5.8
9.2
7.3
2.5
45
22
24
Units
V
V
A
A
A
A
A
mJ
Value
1.1
119
75
1.6
78
49
13.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
Qrr
Min
30
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
-1
- ±100
- 2.0
- 20
- 24
0.70 1.0
1415
119
82
2.6
11.3
25.1
3.5
3.6
4.8
16.5
26.1
5.6
12.3
10.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 11A
VGS = 4.5V, ID = 9A
V VGS = 0V, IS = 1A
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC VDS = 15V, ID = 12A
ns
VDD = 15V, VGS = 10V,
RL = 1.25Ω, RG = 3Ω
ns
nC
IF = 12A, di/dt = 500A/μs
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3016LDN
Document number: DS37307 Rev. 2 - 2
2 of 7
www.diodes.com
January 2015
© Diodes Incorporated

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