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NCEP01T30T डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Super Trench Power MOSFET - NCE Power Semiconductor

भाग संख्या NCEP01T30T
समारोह N-Channel Super Trench Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
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<?=NCEP01T30T?> डेटा पत्रक पीडीएफ

NCEP01T30T pdf
http://www.ncepower.com
Pb Free Product
NCEP01T30T
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=150A
VDS=10V,ID=150A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=50V,ID=100A
VGS=10V,RG=1.8
VDS=50V,ID=100A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IF= 150A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Min Typ Max Unit
100 108
--
--
-
1
±100
V
μA
nA
3
- 1.8
- 150
5
2.1
-
V
m
S
- 18950
- 2090
- 146
-
-
-
PF
PF
PF
--
--
--
--
- 314
- 115
- 80
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 300
- 155
- 436
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=50V,VG=10V,L=1mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0

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डाउनलोड[ NCEP01T30T Datasheet.PDF ]


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