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DMN3008SFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN3008SFG
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN3008SFG pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
t<10s
Steady
State
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
IDM
IS
IAS
EAS
DMN3008SFG
Value
30
±20
17.6
14.1
23.0
18.4
62
50
80
2
45
101
Units
V
V
A
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady State
t < 10s
TA = +25°C
TA = +70°C
Steady State
t < 10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.9
0.6
134
79
2.1
1.3
58
34
4.8
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
30
1
Typ
3.9
4.6
0.75
3,690
530
459
0.9
41
86
9.2
18.6
5.7
14.0
63.7
28.4
19.3
10.7
Max
10
±100
2.3
4.4
5.5
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMN3008SFG
Document number: DS36748 Rev. 5 - 2
2 of 7
www.diodes.com
Unit Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250µA
mVGS = 10V, ID = 13.5A
VGS = 4.5V, ID = 13.5A
V VGS = 0V, IS = 1A
pF
pF
VDS = 10V, VGS = 0V,
f = 1MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 24V, ID = 27A
nC
ns
ns VDD = 15V, VGS = 10V,
ns
ns
RL = 1.11, RG = 4.7,
ID = 13.5A
ns
nC IF=13.5A, di/dt=100A/µs
March 2015
© Diodes Incorporated

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डाउनलोड[ DMN3008SFG Datasheet.PDF ]


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