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DMN2990UFZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2990UFZ
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN2990UFZ pdf
DMN2990UFZ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Pulsed Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +85°C
Symbol
VDSS
VGSS
ID
IDM
Value
20
±8
250
170
800
Units
V
V
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
PD
RθJA
TJ, TSTG
Value
320
402
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
@TC = +25°C
BVDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
20
0.4
180
Typ Max
——
— 100
— ±100
— 1.0
0.60 0.99
0.75 1.2
0.90 1.8
1.2 2.4
2.0 —
——
0.6 1.0
28.2 55.2
4.0 8.0
2.8 5.6
0.5 1.0
0.07 0.14
0.07 0.14
3.5 10
2.1 10
22 35
7.7 15
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = 250μA
nA VDS = 16V, VGS = 0V
nA VGS = ±5V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
mS VDS = 10V, ID = 400mA
V VGS = 0V, IS = 150mA
pF
pF
VDS = 16V, VGS = 0V,
f = 1.0MHz
pF
nC
nC
nC
VGS = 4.5V, VDS = 10V,
ID = 250mA
ns
ns VDD = 10V, VGS = 4.5V,
ns
RL = 47, RG = 10,
ID = 200mA
ns
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
2 of 7
www.diodes.com
January 2015
© Diodes Incorporated

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