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DMN2250UFB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2250UFB
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN2250UFB pdf
DMN2250UFB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 4.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
IS
Value
20
±8
1.35
1.03
6
1
Units
V
V
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
Symbol
PD
RθJA
TJ, TSTG
Value
0.5
0.3
278
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
20
0.35
Typ
1.4
0.7
94
12
10
87.1
1.4
3.1
0.13
0.14
4.3
6.1
59.4
25.4
Max
100
±1
1.0
170
230
250
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = 250μA
nA VDS = 20V, VGS = 0V
µA VGS = ±6V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 1A
mVGS = 2.5V, ID = 1A
VGS = 1.8V, ID = 1A
S VDS = 10V, ID = 1A
V VGS = 0V, IS = 150mA
pF
pF
pF
VDS =16V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC
VDS = 10V, ID = 250mA
nC
ns
ns
ns
ns
VDD = 10V, VGS = 4.5V,
RL = 47, RG = 10,
ID = 200mA
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated

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