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DMN2029USD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2029USD
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMN2029USD pdf
DMN2029USD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 4.5V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Steady
State
t < 10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
20
±8
5.8
4.7
6.9
5.7
2.1
30
15
11.2
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t < 10s
TA = +25°C
TA = +70°C
Steady state
t < 10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
0.7
115
70
1.4
0.9
95
60
14.5
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
20
0.6
Typ
14
19
10
0.7
1171
133
110
1.2
10.4
18.6
1.9
2.3
16.5
33.3
119.3
53.5
7.5
2.0
Max
1
±100
1.5
25
35
1.2
Unit
V
µA
nA
V
m
S
V
pF
nC
nS
nS
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2029USD
Document number: DS36127 Rev. 3 - 2
2 of 6
www.diodes.com
Test Condition
VGS = 0V, ID = 250µA
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 6.5A
VGS = 2.5V, ID = 5.4A
VDS = 5V, ID = 6.5A
VGS = 0V, IS = 1.3A
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 10V, ID = 3A
VGS = 4.5V, VDD = 10V, RGEN = 6,
ID = 1A
IS = 6.5A, dI/dt = 100A/μs
IS = 6.5A, dI/dt = 100A/μs
May 2013
© Diodes Incorporated

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