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DMN2028USS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2028USS
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMN2028USS?> डेटा पत्रक पीडीएफ

DMN2028USS pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source voltage
Gate-Source voltage
Characteristic
Continuous Drain current
VGS = 4.5V
Pulsed Drain current
VGS = 4.5V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 6)
TA = +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
DMN2028USS
Value
20
12
9.8
7.9
7.3
45.0
6.0
45.0
Unit
V
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power dissipation
Linear derating factor
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 8)
Symbol
PD
RJA
RJL
TJ, TSTG
Value
1.56
12.5
2.81
22.5
80.0
44.5
37.0
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN2028USS
Document number: DS32075 Rev. 4 - 2
2 of 7
www.diodes.com
October 2013
© Diodes Incorporated

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