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DMN2028UFDH डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2028UFDH
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN2028UFDH pdf
DMN2028UFDH
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage (Note 5)
Characteristic
Continuous Drain Current (Note 7) VGS = 10V
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Value
20
±12
6.8
5.8
8.8
7.0
2
40
Units
V
V
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 6)
Characteristic
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.1
118
72
1.5
82
50
14
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
20
0.5
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Typ Max
——
—1
— ±10
—1
16 20
17 22
19 26
24 36
8—
0.7 1.0
151 —
91 —
32 —
200 —
8.5 —
1.6 —
2.8 —
53 —
77 —
561 —
234 —
Unit Test Condition
V VGS = 0V, ID = 250μA
µA VDS = 20V, VGS = 0V
µA VGS = ±10V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 10V, ID = 4A
m
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 4A
VGS = 1.8V, ID = 4A
S VDS = 5V, ID = 12A
V VGS = 0V, IS = 5A
pF
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VGS = 4.5V, VDS = 10V,
ID = 6.5A
ns
ns VGS = 10V, VDS = 4.5V,
ns RG = 6, RL = 1.0 , ID = 1A
ns
Notes:
5. AEC-Q101 VGS maximum is ±9.6V.
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN2028UFDH
Document number: DS35805 Rev. 5 - 2
2 of 6
www.diodes.com
January 2013
© Diodes Incorporated

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