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DMN2013UFX डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN2013UFX
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMN2013UFX?> डेटा पत्रक पीडीएफ

DMN2013UFX pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = 2.5V
Steady
State
Pulsed Drain Current (Note 7)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
DMN2013UFX
Value
20
±8
10
8
9
7
80
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Max
0.78
163
2.14
59
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
IDSS
IGSS
20
——
—1
— ±10
VGS(th)
0.5
RDS (ON)
|Yfs|
VSD
— 1.1
8.4 11.5
8.5 12.0
8.6 12.5
9.0 13.5
9.6 14.0
18.2 —
— 1.2
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
— 2607 —
— 255 —
— 236 —
— 1.2 —
— 32.4 —
— 57.4 —
— 3.5 —
— 4.0 —
— 8.6 —
— 20.3 —
— 42.5 —
— 13.7 —
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 16V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.5A
VGS = 4.0V, ID = 8.5A
mVGS = 3.5V, ID = 8.5A
VGS = 3.1V, ID = 8A
VGS = 2.5V, ID = 8A
S VDS = 5V, ID = 4A
V VGS = 0V, IS = 8.5A
pF
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VDS = 10V, ID = 8.5A
nC
ns
ns VDS = 10V, ID = 8.5A
ns VGS = 4.5V, RG = 1.8
ns
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated

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