DataSheet.in

DMN1033UCB4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN1033UCB4
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
1 Page
		
<?=DMN1033UCB4?> डेटा पत्रक पीडीएफ

DMN1033UCB4 pdf
Maximum Ratings
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Source Current @
VGS = 4.5V TA = +25°C (Note 5)
Steady
State
TA = +25°C
TA = +70°C
Pulsed Source Current @ TA = +25°C (Notes 5 & 6)
Symbol
VSSS
VGSS
IS
ISM
DMN1033UCB4
Value
12
6
5.5
4.5
20
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation, @TA = +25°C (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
1.45
88.21
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS (Note 7)
Source to Source Breakdown Voltage TJ = +25°C V(BR)SS
12
Zero Gate Voltage Source Current TJ = +25°C
ISSS
1.0
Gate-Body Leakage
IGSS
10
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.35
0.5
0.7
Static Source -Source On-Resistance
RSS(ON)
19.5
20
20.5
21
21.5
22
26
35
26
27
28
29
30
31
33
50
Forward Transfer Admittance
Body Diode Forward Voltage
|Yfs| —
11
VF(S-S)
0.7
1.0
DYNAMIC CHARACTERISTICS (Note 8)
Total Gate Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
tD(on)
tr
tD(off)
tf
37
10
20
83
52
Notes:
5. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Unit
V
µA
µA
V
m
S
V
nC
ns
ns
ns
ns
Test Condition
IS = 1mA, VGS = V
VSS = 12V, VGS = 0V
VGS = 6V, VDS = 0V
VSS = 10V, IS = 1.0mA
VGS = 4.5V, IS = 3.0A
VGS = 4.0V, IS = 3.0A
VGS = 3.7V, IS = 3.0A
VGS = 3.5V, IS = 3.0A
VGS = 3.1V, IS = 3.0A
VGS = 2.5V, IS = 3.0A
VGS = 1.8V, IS = 3.0A
VGS = 1.5V, IS = 3.0A
VSS = 10V, IS = 3.0A
IF = 3.0 A, VGS = 0 V,
VGS = 4.5V, VSS = 10V, IS = 6A
VDD = 6V,
RL = 6.0, IS = 3.0A
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated

विन्यास 6 पेज
डाउनलोड[ DMN1033UCB4 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DMN1033UCB4N-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English