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84N06CLD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOS FET - Renesas

भाग संख्या 84N06CLD
समारोह N-CHANNEL POWER MOS FET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=84N06CLD?> डेटा पत्रक पीडीएफ

84N06CLD pdf
NP84N06CLD, NP84N06DLD, NP84N06ELD
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 42 A
RDS(on)2 VGS = 5 V, ID = 35 A
RDS(on)3 VGS = 4 V, ID = 35 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 35 A
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
ID = 35 A
Rise Time
tr VGS(on) = 10 V
Turn-off Delay Time
Td(off)
VDD = 30 V
Fall Time
tf RG = 10
Total Gate Charge
QG ID = 70 A
Gate to Source Charge
QGS
VDD = 48 V
Gate to Drain Charge
QGD
VGS = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 70 A, VGS = 0 V
Reverse Recovery Time
trr IF = 70A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100A/µs
MIN. TYP. MAX. UNIT
5.5 6.5 m
6.4 9.5 m
7.0 10.5 m
1.0 1.5 2.0 V
20 94
S
10 µA
±10 µA
7200 10900 pF
2000 3000 pF
700 1300 pF
50 110 ns
650 1700 ns
450 900 ns
800 2000 ns
150 230 nC
19 nC
40 nC
0.97 V
80 ns
256 nC
TETESSTTCCIIRRCCUUIITT11 AAVAVLAALNACNHCE HCEAPCAABPILAITBYILITY
TETSETSCTIRCCIURICT U2 ITSW2ITSCWHIINTGCTHIMINEG TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
RG = 10
VGS
0
t
t = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on)
ID 90 %
ID
Wave Form
0 10 %
ID
90 %
90 %
10 %
td(on)
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D13464EJ3V0DS00

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डाउनलोड[ 84N06CLD Datasheet.PDF ]


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