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2SC3356 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon RF Transistor - Renesas

भाग संख्या 2SC3356
समारोह NPN Silicon RF Transistor
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=2SC3356?> डेटा पत्रक पीडीएफ

2SC3356 pdf
2SC3356
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1.0 V, IC = 0
h Note 1
FE
VCE = 10 V, IC = 20 mA
fT VCE = 10 V, IC = 20 mA
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
NF VCE = 10 V, IC = 7 mA, f = 1 GHz
C Note 2
re
VCB = 10 V, IE = 0, f = 1 MHz
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
<R> hFE CLASSIFICATION
Rank
Marking
hFE Value
Q/YQ
R23
50 to 100
R/YR
R24
80 to 160
S/YS
R25
125 to 250
MIN. TYP. MAX. Unit
– – 1.0 μA
– – 1.0 μA
50 120 250
– 7 – GHz
– 11.5 –
dB
– 1.1 2.0 dB
0.55 1.0 pF
R09DS0021EJ0300 Rev.3.00
Jun 28, 2011
Page 2 of 7

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