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SE2310 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SOT-23 Plastic-Encapsulate MOSFETS - WILLAS

भाग संख्या SE2310
समारोह SOT-23 Plastic-Encapsulate MOSFETS
मैन्युफैक्चरर्स WILLAS 
लोगो WILLAS लोगो 
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<?=SE2310?> डेटा पत्रक पीडीएफ

SE2310 pdf
WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
SE2310
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =60V,VGS = 0V
Gate-body leakage current
IGSS VGS =±20V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =250µA
Drain-source on-resistance (note 3)
RDS(on)
VGS =10V, ID =3A
VGS =4.5V, ID =3A
Forward tranconductance (note 3)
gFS VDS =15V, ID =2A
Diode forward voltage (note 3)
VSD IS=3A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss VDS =30V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VGS=10V,VDD=30V,
ID=1.5A,RGEN=1
Turn-off fall time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS =30V,VGS =4.5V,ID =3A
Gate-Drain Charge
Qgd
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t10s.
3. Pulse Test : Pulse Width300µs, Duty Cycle0.5%.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
60 V
1 µA
±100 nA
0.5 2 V
105 m
125 m
1.4 S
1.2 V
247 pF
34 pF
19.5 pF
6 ns
15 ns
15 ns
10 ns
6 nC
1 nC
1.3 nC
2013-10
WILLAS ELECTRONIC CORP.

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डाउनलोड[ SE2310 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SE2310SOT-23 Plastic-Encapsulate MOSFETSWILLAS
WILLAS


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