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ZXTN25040DFH डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 40V NPN MEDIUM POWER PLANAR TRANSISTOR - Diodes

भाग संख्या ZXTN25040DFH
समारोह 40V NPN MEDIUM POWER PLANAR TRANSISTOR
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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ZXTN25040DFH pdf
A Product Line of
Diodes Incorporated
ZXTN25040DFH
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
(Note 6)
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
ICM
IB
Value
130
130
40
6
7
4
10
1
Unit
V
V
V
V
V
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
PD
-
RθJA
RθJL
TJ, TSTG
Value
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
171
119
100
69
74.95
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
Notes:
4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. As note 6 above, measured at t < 5 seconds
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTN25040DFH
Document number: DS33697 Rev. 2 - 2
2 of 7
www.diodes.com
January 2012
© Diodes Incorporated

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