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BF5020W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-Channel MOSFET Tetrode - Infineon

भाग संख्या BF5020W
समारोह Silicon N-Channel MOSFET Tetrode
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
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<?=BF5020W?> डेटा पत्रक पीडीएफ

BF5020W pdf
Thermal Resistance
Parameter
Channel - soldering point1)
BF5020, BF5020R
BF5020W
Symbol
Rthchs
BF5020...
Value
370
280
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 20 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0
Gate2-source breakdown voltage
+IG2S = 10 mA, VG1S = 0 , VDS = 0
Gate1-source leakage current
VG1S = 6 V, VG2S = 0 , VDS = 0
Gate2-source leakage current
VG2S = 6 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 120 k
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 µA, VG1S = 2 V
V(BR)DS
12 -
-V
+V(BR)G1SS 6
- 15
+V(BR)G2SS 6
- 15
+IG1SS
- - 50 nA
+IG2SS
- - 50
IDSS
- - 100
IDSX
- 14 - mA
VG1S(p)
- 0.7 - V
VG2S(p)
- 0.7 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 2009-10-01

विन्यास 11 पेज
डाउनलोड[ BF5020W Datasheet.PDF ]


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