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I2N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - nELL

भाग संख्या I2N60
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स nELL 
लोगो nELL लोगो 
पूर्व दर्शन
1 Page
		
<?=I2N60?> डेटा पत्रक पीडीएफ

I2N60 pdf
SEMICONDUCTOR
I2N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB
TO-220F
TO-220AB
TO-220F
Min. Typ. Max.
0.56
2.4
62.5
62.5
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA, VGS = 0V
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS =VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
Gate threshold voltage
DYNAMIC CHARACTERISTICS
VGS = 10V, lD = 6A
VGS=VDS, ID=250μA
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
RG Gate resistance
SWITCHING CHARACTERISTICS
VDS = 25V, VGS = 0V, f =1MHz
VDS = 0V, VGS = 0V, f =1MHz
td(ON)
tr
td(OFF)
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V
ID = 12A, RGS = 25Ω (Note1,2)
tf
QG
QGS
QGD
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V
ID = 12A, (Note1,2)
Min.
600
2
0.2
Typ.
0.7
0.6
1480
200
25
30
115
95
85
42
8.6
21
Max. UNIT
V
V/ºC
10
μA
100
100
-100
nA
0.8 Ω
4V
1900
270
35
1.2
pF
Ω
70
240
ns
200
180
54
nC
www.nellsemi.com
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