40FDR डेटा पत्रक PDF( Datasheet डाउनलोड )

डेटा पत्रक - Fast Recovery Diodes - nELL

 भाग संख्या 40FDR समारोह Fast Recovery Diodes मैन्युफैक्चरर्स nELL लोगो पूर्व दर्शन 1 Page ``` SEMICONDUCTOR 40FD(R)Series RRooHHSS Nell High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at maximum case temperature Maximum RMS forward current Maximum peak repetitive forward current Maximum peak, one-cycle non-reptitive surge current Maximum l²t for fusing SYMBOL TEST CONDITIONS IF(AV) 180° conduction, half sine wave IF(RMS) IFRM IFSM I2t Sinusoidal half wave, 30° conduction t = 10ms Sinusoidal half wave, 100% VRRM t = 8.3ms reapplied, initial TJ =TJ maximum t = 10ms Sinusoidal half wave, no voltage t = 8.3ms reapplied, initial TJ =TJ maximum t = 10ms 100% VRRM reapplied, t = 8.3ms initial TJ =TJ maximum t = 10ms no voltage reapplied, t = 8.3ms initial TJ =TJ maximum Maximum l²√t for fusing(1) I2√t t = 0.1 ms to 10 ms, no voltage reapplied Maximum value of threshold voltage Maximum value of forward slope resistance Maximum forward voltage drop VF(TO) rF VFM TJ = 125°C TJ = 25°C; lFM = 125A Note : (1) l2t for time tx =I2√t √tx 40FD(R) 40 85 63 220 400 420 475 500 800 732 1128 1038 11281 1.081 6.33 1.95 UNIT A ºC A A A A2s A2√s V mΩ V SWITCHING PARAMETER SYMBOL TEST CONDITIONS Typical reverse recovery time trr Typical reverse recovered charge Qrr TJ = 25°C, IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT) TJ = 25°C, IF = 1A to VR = 30V, -dlF/dt = 100 A/µs TJ = 25°C, -dlF/dt = 25 A/µs, lFM = π x rated lF(AV) TJ = 25°C, IF = 1A to VR = 30V, -dlF/dt = 100 A/µs TJ = 25°C, -dlF/dt = 25 A/µs, lFM = π x rated lF(AV) 40FD(R) 02 to 06 08 to 12 200 500 UNIT 70 180 ns 200 500 160 750 240 1300 nC www.nellsemi.com Page 2 of 6 ``` विन्यास 6 पेज डाउनलोड [ 40FDR Datasheet.PDF ]

अनुशंसा डेटापत्रक

 भाग संख्या विवरण विनिर्माण 40FD Fast Recovery Diodes nELL 40FDR Fast Recovery Diodes nELL

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