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40FDR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Fast Recovery Diodes - nELL

भाग संख्या 40FDR
समारोह Fast Recovery Diodes
मैन्युफैक्चरर्स nELL 
लोगो nELL लोगो 
पूर्व दर्शन
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<?=40FDR?> डेटा पत्रक पीडीएफ

40FDR pdf
SEMICONDUCTOR
40FD(R)Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-reptitive surge current
Maximum l²t for fusing
SYMBOL
TEST CONDITIONS
IF(AV) 180° conduction, half sine wave
IF(RMS)
IFRM
IFSM
I2t
Sinusoidal half wave, 30° conduction
t = 10ms Sinusoidal half wave, 100% VRRM
t = 8.3ms reapplied, initial TJ =TJ maximum
t = 10ms Sinusoidal half wave, no voltage
t = 8.3ms reapplied, initial TJ =TJ maximum
t = 10ms 100% VRRM reapplied,
t = 8.3ms initial TJ =TJ maximum
t = 10ms no voltage reapplied,
t = 8.3ms initial TJ =TJ maximum
Maximum l²t for fusing(1)
I2t t = 0.1 ms to 10 ms, no voltage reapplied
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
VF(TO)
rF
VFM
TJ = 125°C
TJ = 25°C; lFM = 125A
Note : (1) l2t for time tx =I2t tx
40FD(R)
40
85
63
220
400
420
475
500
800
732
1128
1038
11281
1.081
6.33
1.95
UNIT
A
ºC
A
A
A
A2s
A2s
V
mΩ
V
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
Typical reverse recovery time
trr
Typical reverse recovered charge
Qrr
TJ = 25°C, IF = 0.5A, IR = 1.0A,
IRR = 250mA (RG#1 CKT)
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
40FD(R)
02 to 06 08 to 12
200 500
UNIT
70 180
ns
200 500
160 750
240 1300
nC
www.nellsemi.com
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
40FDFast Recovery DiodesnELL
nELL
40FDRFast Recovery DiodesnELL
nELL


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