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9013 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON EPITAXIAL TRANSISTOR - Unisonic Technologies

भाग संख्या 9013
समारोह NPN SILICON EPITAXIAL TRANSISTOR
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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9013 pdf
9013
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC 500 mA
Collector dissipation
PC 625 mW
Junction Temperature
TJ 125 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(on)
CLASSIFICATION OF hFE1
TEST CONDITIONS
IC=-100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=1V, IC=10mA
MIN TYP MAX UNIT
40 V
20 V
5V
100 nA
100 nA
64 120
40 120 300
0.16 0.6
V
0.91 1.2
V
0.6 0.67 0.7
V
RANK
RANGE
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-030.C

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