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ULB124 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON TRANSISTOR - Unisonic Technologies

भाग संख्या ULB124
समारोह NPN SILICON TRANSISTOR
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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<?=ULB124?> डेटा पत्रक पीडीएफ

ULB124 pdf
ULB124
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO 600 V
Collector-Emitter Voltage
VCEO 400 V
Emitter-Base Voltage
VEBO 8 V
Collector Current
DC
Pulse
IC
2A
4A
Base Current
DC
Pulse
IB
1A
2A
TO-220
35
Power Dissipation (TC=25°C) TO-251
PD
20 W
TO-126
1.4
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO IC=1mA
BVCEO IC=10mA
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BVEBO IE=1mA
ICBO VCB=600V
Emitter Cutoff Current
ON CHARACTERISTICS
IEBO VEB=9V, IC=0
DC Current Gain(Note)
hFE1
hFE2
VCE= 5V, IC=0.3A
VCE= 5V, IC=0.5A
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
SWITCHING CHARACTERISTICS
hFE3
VCE(SAT)
VBE(SAT)
VCE= 5V, IC=1A
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
Gain-Bandwidth Product
fT VCE=10V, IC=0.3A, f=1MHz
Note: Pulse Test : Pulse Width380µs, Duty Cycle2%
CLASSIFICATION OF hFE1
MIN TYP MAX UNIT
600 V
400 V
8V
10 µA
10 µA
10 40
10
6
0.3 V
0.8 V
0.9 V
1.2 V
15 MHz
RANK
Range
B1
10 ~ 17
B2
13 ~ 22
B3
18 ~ 27
B4
23 ~ 32
B5
28 ~ 37
B6
33 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-013.G

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डाउनलोड[ ULB124 Datasheet.PDF ]


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