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BLM2004NE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOSFET - BELLING

भाग संख्या BLM2004NE
समारोह N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स BELLING 
लोगो BELLING लोगो 
पूर्व दर्शन
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<?=BLM2004NE?> डेटा पत्रक पीडीएफ

BLM2004NE pdf
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±10V,VDS=0V
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250µA
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
Forward Transconductance
gFS VDS=5V,ID=6A
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=10V,RL=1. 5
VGS=5V,RGEN=3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=10V,ID=6A,
Qgs
VGS=4.5V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=1A
Diode Forward Current (Note 2)
IS
Pb Free Product
BLM2004NE
Min Typ Max Unit
20 - V
- - 1 µA
- - ±10 µA
0.45 0.7
- 17
- 22
- 20
1.0
24
30
-
V
m
m
S
- 650
- 140
- 60
-
-
-
PF
PF
PF
- 0.5
-1
- 12
-4
-8
- 2.5
-3
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Page2
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डाउनलोड[ BLM2004NE Datasheet.PDF ]


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